share | improve this answer | follow | answered Jan 22 '19 at 13:21. And that's more than what the transistor could give (13A).I think I found the answer We assume that: $$I_d = 260mA$$ $$V_S = Vd - R_{DS(ON)}*I_d = 100-0,295*260*0,001 = 99,9233V$$ And so $$V_{DS} = V_d-Vs = 0,0767$$ $$T_{PMOS} =T_a + R_{\theta ja}*V_{d}*I_{load} $$ So T_{PMOS} =50 + 0,295*260*10^{-3} = 52,19°C Same results. Science Advisor .
Die Sperrschichttemperatur steigt proportional zum Stromverbrauch. Hence R2 resistor limits the Vgs value to 10V.
TthanksHence the static power dissipation is not a problem (if the ON/OFF period is long <1KHz). current. Because to turn-OFF the P-MOS, the Voltage at the gate should be equal to about 96V, and 3.3V cannot do this.
Aus diesem Grund ist es nicht empfehlenswert, die Sperrschichttemperatur basierend auf der Gehäusetemperatur zu schätzen.Grundsätzlich handelt es sich beim Wärmewiderstand Sperrschicht-zu-Gehäuse Rth(j-c) um einen Index, der für gepackte Geräte der Serie TO220 (Durchgangsbohrung) verwendet wird, indem er auf den Kühlkörper gelötet wird. The steady-state junction temperature of Q1 can be approximated by: T J = T A + P d ⋅ R θ J A, where R θ J A is the junction-to-ambient thermal resistance, and T A is the ambient temperature. On the whole, I'd favor going with the engineering approach on this one as far as design goes - rather than calculate the theoretical temperature, I'd look for some semi-emperical rating or recommendations given by the manufacturer (which appears to be the case). By using our site, you acknowledge that you have read and understand our Electrical Engineering Stack Exchange is a question and answer site for electronics and electrical engineering professionals, students, and enthusiasts. An npn transistor has the base as the middle p layer, and the emitter and collector as the two n layers sandwiching the base. Example 2: Must calculate the junction temperature of a mosfet at 50 watt dissipation when mounted on to a 0.8°C/W heat sink: View example: Example 3: Must calculate the maximum power dissipation of a certain transistor mounted on to a 2°C/W heat sink: View example The best answers are voted up and rise to the top
For an npn, the base-emitter behaves as a forward-biased diode and the base-collector behaves as a reverse-biased diode. (Feb 23, 2020) Francis said: For a bipolar junction transistor determine beeta, if alfa = 0.99 ? Current (Ic) and Voltage between the collector and emitter (V CE).